On the theory of carrier number fluctuations in MOS devices
Abstract
An analysis of the concept of input gate voltage spectral density in MOS devices is presented. It is shown that, within a carrier fluctuation model, the input gate voltage spectral density can be regarded as a flat band voltage spectral density SVfb. It is demonstrated that the relationship between the drain current and flat band voltage spectral densities, S Id = g m2S Vfb, is applicable from the linear to the saturation regime of MOSFET operation.
- Publication:
-
Solid State Electronics
- Pub Date:
- July 1989
- DOI:
- 10.1016/0038-1101(89)90113-5
- Bibcode:
- 1989SSEle..32..563G