Acoustoelectronic interaction of surface waves in GaAs-InGaAs superlattices

Although there has been considerable interest in semiconductor superlattices, the interaction of acoustic waves with the charge carriers in them was given no attention. The first experimental data are given on the acoustoelectronic interaction of the superlattice of GaAs during the propagation of surface acoustic waves. The properties of the superlattice are manifested most clearly in the transverse acoustoelectric effect. In an experiment surface acoustic waves were generated in a GaAs backing at a frequency 140 MHz by a high-frequency voltage transducer. All research was at room temperature. Data were obtained on the dependence of the amplitude of the acoustoelectric effect on different current strengths for different intensities of surface acoustic waves. It was found that the redistribution of free charge carriers within the limits of each layer and between layers (40 layers were formed) under the influence of a flowing current and surface acoustic waves leads to a new mechanism of nonlinear acoustoelectronic interaction more intense than the known concentration mechanism. The experiments revealed the essential features of superlattices even at temperature.