Measurement of the NP Product and Minority Carrier Mobility in Heavily Doped P-Type Gallium Arsenide

This thesis is concerned with the effects of heavy impurity doping on band structure and minority carrier transport in p-type GaAs. It includes discussion of the first measurements to demonstrate the profound influence of effective bandgap shrinkage on technologically important GaAs-based electrical devices, including heterojunction bipolar transistors and solar cells. It also explores a promising technique for determining the effect of heavy doping on the minority electron mobility, the time-of-flight method. Several examples which illustrated the influence of effective bandgap shrinkage on GaAs-based bipolar devices are presented.