High Field Electron Transport in Silicon Dioxide.
For large electric fields, the energy distribution of electrons in silicon dioxide can be determined in a Monte Carlo simulation. This procedure has been coupled to a rate equation model which describes trapping and detrapping processes self consistently with the Poisson equation. A cross section for the impact ionization of electrons from localized trap states is obtained using the local electron energy distribution. The shift in the flat band voltage and the residual charge distribution in the oxide after high field stressing are calculated for the hot electron injection experiment. These results demonstrate how a model based upon microscopic scattering processes can be applied to the calculation of a macroscopic quantity like the shift in the flat band voltage.
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- Engineering: Electronics and Electrical; Physics: Condensed Matter