Characterization by means of electrochemical impedance measurement and optoelectrochemical analysis of electrolytic, insulating, and semiconducting solution structures. Development of a cartographic analysis method for optoelectrochemical impedance
Abstract
Characterization methods for the analysis of the silicon oxide compounds involved in semiconductor-insulating compound interfaces are presented. The reasons for developing more precise characterization methods are described. An electrochemical impedance method is presented. Experimental and theoretical results using this technique are compared. Photoelectrochemical impedance measuring techniques are described. A theoretical analysis of structural behavior is proposed which explains similarities in the experimental results obtained using electrochemical and photoelectrochemical techniques. A cartographic approach to photoelectrochemical impedance analysis is described.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- 1989
- Bibcode:
- 1989PhDT........15R
- Keywords:
-
- Characterization;
- Impedance Measurement;
- Optoelectronic Devices;
- Optogalvanic Spectroscopy;
- Photoelectrochemistry;
- Mapping;
- Semiconductors (Materials);
- Silicon Oxides;
- Optics