Crystallization of single-crystal layers of silicon carbide on silicon at temperatures of 1050-1250 C
Abstract
It is reported that single-crystal layers of cubic silicon carbide 1-1.5 micron thick can be grown on silicon substrates at temperatures of 1050-1250 C. Crystals were grown by means of gas-transport epitaxy.
- Publication:
-
Pisma v Zhurnal Tekhnischeskoi Fiziki
- Pub Date:
- June 1989
- Bibcode:
- 1989PZhTF..15...50B
- Keywords:
-
- Crystallization;
- Epitaxy;
- Silicon Carbides;
- Single Crystals;
- Silicon;
- Substrates;
- Thin Films;
- X Ray Diffraction;
- Solid-State Physics