Nucleation and growth of SiO 2 precipitates in SOI/SIMOX related materials — Dependence upon damage and atomic oxygen profiles
(100) single crystal silicon substrates were implanted with a total oxygen dose of 0.15 × 10 18 O + cm -2, over an energy range of 140-207 keV. One specimen was implanted from low-to-high energies and the other from high-to-low energies. Specimens were examined, prior to annealing, by Rutherford backscattering (RBS) and ion channelling, secondary ion mass spectrometry (SIMS) and cross sectional transmission electron microscopy (XTEM). Specimens were also analysed, after medium (1000°C 3 h) and high (1405°C 0.5 h) temperature annealing, by XTEM. This enabled the nucleation and growth of the oxide precipitates within the structure to be followed, during implantation and annealing, it also allowed the part played by implantation damage in determining the final structure to be assessed.