ZnO crystal orientation change by bias voltage application to substrate or target in ion beam sputtering
The effects of charged sputtered particles on the crystal orientation during ion beam sputtering deposition of zinc oxide films are presented. The formation of the necessary c-axis orientation was tried by controlling the kinetic energies of the sputtered charged particles in two different methods. In one method, a bias voltage is applied to three substrate materials: Corning 7059 glass, Si(100), and ZnS thin film, while in the other method, it is applied to a ZnO target. It is found that the existence of positively charged sputtered particles and the absence of negatively charged particles on the substrate are effective in forming c-axis orientation.