The high degree of stability and beam purity characteristic of rf acceleration techniques have been well demonstrated with the Eaton NV-1000 ion implanter. The series has been extended to take fuller advantage of the high current capability of the technique. The NV-1002 will provide milliampère beams to energies of 2 MeV over a wide range of ion masses. In addition to the higher current capability, the new series will be smaller in size and incorporate the most recent Eaton end-station technology. The Eaton Advanced control system will be used in the automation of source, injector, linac and robotic end station.