Mössbauer spectroscopy study of the thermal annealing behavior of very low and very high dose Co-implanted Si
The microscopic surrounding of Co atoms in ion-implanted and thermally annealed Si was followed by Mossbauer spectroscopy. For implantation doses between 5 × 10 10 and 10 14 atoms/cm 2 the Mössbauer data support the single track amorphization model. Upon thermal annealing Co-implanted Si, the formation of Co 2 dimers is observed as a first step in the nucleation of epitaxial CoSi 2 precipitates. A buried CoSi 2 layer was obtained by ion implantation of Co in Si with 2 × 10 17 atoms/cm 2 with an implantation energy of 160 keV and a target temperature of 250° C.