We have studied anomalous diffusion of boron implanted into silicon along the  channeling direction versus random directions for 5, 10, and 40 keV, 2 × 10 14 cm 2 boron implantations. Three different annealing conditions, 800 °C for l h, 900 °C for 30 min, and 1000 °C for 10 s, were studied. Anomalous diffusion was observed for all implants annealed at all conditions. The amount of enhanced diffusion is 10-50% higher in the implants along the channeling direction than along the random directions. We attribute the mechanism of the diffusion enhancement to the annealing of ion implantation damage. The difference of diffusion enhancement between channeled implants and random implants are due to the difference in damage profile of the two different implants. Electrical activity of boron is observed for random and for channeled implantations, and the shape of the Hall profile agrees with that of SIMS.