Monolithic control components handle 27 W of RF power
Abstract
This paper describes a general approach to overcoming the voltage limitations of the individual switch FET by effectively combining several FETs in a monolithic series configuration. The operation of this configuration is examined using, as an example, a combination of two FETs that are shunt-mounted to an RF line. The technology described is considered to be appplicable to an arbitrary number of cells in shunt or in series with the RF transmission line. It is shown that such a FET circuit allows the power-handling capability of MMIC GaAs FET switches to be increased by more than an order of magnitude.
- Publication:
-
Microwave Journal
- Pub Date:
- December 1989
- Bibcode:
- 1989MiJo...32..119S
- Keywords:
-
- Field Effect Transistors;
- Integrated Circuits;
- Limiter Circuits;
- Microwave Circuits;
- Microwave Switching;
- Network Synthesis;
- Insertion Loss;
- P-I-N Junctions;
- Power Factor Controllers;
- Standing Wave Ratios;
- Ultrahigh Frequencies;
- Electronics and Electrical Engineering