Growth kinetics, impurity incorporation, defect generation, and interface quality of molecular-beam epitaxy grown AlGaAs/GaAs quantum wells: Role of group III and group V fluxes
Abstract
- Publication:
-
Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures
- Pub Date:
- July 1989
- DOI:
- 10.1116/1.584629
- Bibcode:
- 1989JVSTB...7..704M