Reactively sputtered titanium boride thin films
Abstract
Thin films of titanium boride were deposited by reactive sputtering in a mixture of argon and 6% diborane. The use of reactive sputtering makes it possible to deposit films with different compositions. The overall composition of the films was determined by Rutherford backscattering. The crystallization of the films and the variation in resistivity with the annealing temperature have been studied. The minimum resistivity was obtained for stoichiometric TiB2. It was confirmed by both Rutherford backscattering and Auger depth profiling that titanium boride prevents reactions between silicon and aluminum up to temperatures slightly above 600 °C. Structures with TiB2 acting as a diffusion barrier between silicon and aluminum, and a more sophisticated metallization structure also containing a thin titanium layer for silicide formation during heat treatments, have been studied.
- Publication:
-
Journal of Vacuum Science Technology A: Vacuum Surfaces and Films
- Pub Date:
- March 1989
- DOI:
- 10.1116/1.575746
- Bibcode:
- 1989JVSTA...7..162B