Electron spin resonance in electron-irradiated 3C-SiC
Abstract
Electron-irradiation-induced defects in epitaxially grown 3C-SiC crystals have been studied by electron-spin-resonance (ESR) measurements. The results indicate the presence of an isotropic ESR center that consists of five lines equally spaced at about 1.5 G and has a g value of 2.0029±0.0001. Isochronal and isothermal annealing of electron-irradiated 3C-SiC showed that this center was annealed at three stages (150, 350, and 750 °C) and that the 750 °C stage exhibited first-order reaction with an activation energy of 2.2±0.3 eV.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- November 1989
- DOI:
- Bibcode:
- 1989JAP....66.4529I
- Keywords:
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- Crystal Structure;
- Electron Irradiation;
- Electron Paramagnetic Resonance;
- Silicon Carbides;
- Spin Resonance;
- Annealing;
- Cubic Lattices;
- Epitaxy;
- Substrates;
- Vapor Deposition;
- Solid-State Physics