Physical modeling of GaAs MESFET's in an integrated CAD environment - From device technology to microwave circuit performance
Abstract
The linkage between a physical device simulator for small- and large-signal characterization and CAD tools for both linear and nonlinear circuit analysis and design is considered. Efficient techniques for the physical dc and small-signal analysis of MESFETs are presented. The problem of physical simulation in a circuit environment is discussed, and it is shown how such a simulation makes possible small-signal models accounting for propagation and external parasitics. Efficient solutions for physical large-signal simulation, based on deriving large-signal equivalent circuits from small-signal analyses under different bias conditions, are proposed. The small- and large-signal characterizations allow physical simulation to be performed efficiently in a circuit environment. Examples and results are presented.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- March 1989
- DOI:
- 10.1109/22.21615
- Bibcode:
- 1989ITMTT..37..457G
- Keywords:
-
- Computer Aided Design;
- Field Effect Transistors;
- Gallium Arsenides;
- Integrated Circuits;
- Microwave Circuits;
- Schottky Diodes;
- Continuity Equation;
- Equivalent Circuits;
- Mathematical Models;
- Poisson Equation;
- Electronics and Electrical Engineering