Physical modeling of GaAs MESFET's in an integrated CAD environment  From device technology to microwave circuit performance
Abstract
The linkage between a physical device simulator for small and largesignal characterization and CAD tools for both linear and nonlinear circuit analysis and design is considered. Efficient techniques for the physical dc and smallsignal analysis of MESFETs are presented. The problem of physical simulation in a circuit environment is discussed, and it is shown how such a simulation makes possible smallsignal models accounting for propagation and external parasitics. Efficient solutions for physical largesignal simulation, based on deriving largesignal equivalent circuits from smallsignal analyses under different bias conditions, are proposed. The small and largesignal characterizations allow physical simulation to be performed efficiently in a circuit environment. Examples and results are presented.
 Publication:

IEEE Transactions on Microwave Theory Techniques
 Pub Date:
 March 1989
 DOI:
 10.1109/22.21615
 Bibcode:
 1989ITMTT..37..457G
 Keywords:

 Computer Aided Design;
 Field Effect Transistors;
 Gallium Arsenides;
 Integrated Circuits;
 Microwave Circuits;
 Schottky Diodes;
 Continuity Equation;
 Equivalent Circuits;
 Mathematical Models;
 Poisson Equation;
 Electronics and Electrical Engineering