Small angle X-ray scattering from microvoids in the a-SiC:H alloy
Abstract
Small-angle X-ray scattering (SAXS) measurements on a series of a-SiC:H alloy films deposited in a glow discharge reactor using SiH4/CH4 gas mixtures are discussed. It was found that the introduction of C into the a-Si matrix produces a large SAXS signal, which suggests a sizable microvoid density, and which further increases with increasing C content. A Guinier analysis shows that these microvoids are spherical and have an average radius of approximately 6 A, which increases only slightly with C content. Other measurements (infrared, photoconductivity, film density, optical) made on identically prepared material are included to identify the possible origins of these microvoids and to determine how they affect material quality.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- December 1989
- DOI:
- 10.1109/16.40947
- Bibcode:
- 1989ITED...36.2859M
- Keywords:
-
- Amorphous Silicon;
- Carbon Compounds;
- Gas Mixtures;
- Glow Discharges;
- Silanes;
- X Ray Scattering;
- Hydrogen Compounds;
- Infrared Spectra;
- Photoconductivity;
- Silicon Compounds;
- Surface Roughness;
- Voids;
- Solid-State Physics