Room-temperature continuous-wave vertical-cavity single-quantum-well microlaser diodes
Abstract
Room-temperature continuous and pulsed lasing of vertical-cavity, single-quantum-well, surface-emitting microlasers is achieved at about 983 nm. The active Ga(0.8)In(0.2)As single quantum well is 100 A thick. These microlasers have the smallest gain medium volumes among lasers ever built. The entire laser structure is grown by molecular beam epitaxy and the microlasers are formed by chemically assisted ion-beam etching. The microlasers are 3-50 microns across. The minimum threshold currents are 1.1 mA (pulsed) and 1.5 mA (CW).
- Publication:
-
Electronics Letters
- Pub Date:
- September 1989
- DOI:
- 10.1049/el:19890921
- Bibcode:
- 1989ElL....25.1377L
- Keywords:
-
- Continuous Wave Lasers;
- Laser Outputs;
- Quantum Efficiency;
- Quantum Wells;
- Semiconductor Lasers;
- Gallium Arsenides;
- Indium Arsenides;
- Laser Cavities;
- Pulsed Lasers;
- Threshold Currents;
- Lasers and Masers