High-power (1W, CW) single-lobe operation of LPE-grown GaInAsP/GaInP (lambda = 0.8 micron) separate-confinement single-quantum-well broad-area lasers
Abstract
Liquid-phase epitaxy was used to grow single-quantum-well separate-confinement laser structures with a GaInAsP active layer. Broad-area devices with 100-micron-wide stripes that were fabricated from these structures emit over 1 W of optical power per facet at a wavelength of 0.8 micron in continuous room-temperature operation. A stable single-lobed far-field pattern with a beam divergence as low as 0.6 deg is obtained in pulsed operation.
- Publication:
-
Electronics Letters
- Pub Date:
- August 1989
- DOI:
- 10.1049/el:19890831
- Bibcode:
- 1989ElL....25.1239G
- Keywords:
-
- Gallium Arsenide Lasers;
- Liquid Phase Epitaxy;
- Pulsed Lasers;
- Quantum Efficiency;
- Quantum Optics;
- Quantum Wells;
- Current Density;
- Far Fields;
- Gallium Phosphides;
- Indium Arsenides;
- Indium Phosphides;
- Lasers and Masers