Infra-red intraband absorption detectors with etched 35 deg mesa facets for vertically incident light
Abstract
GaAs/AlGaAs intraband absorption detectors are reported that are able to detect vertically incident long-wavelength infra-red light through etched 35 deg mesa facets. With 2 V bias voltage, responsivities of 0.06 A/W at 77 K and 0.11 A/W at 40 K and dark current densities of 19 pA/sq microns at 77 K and 0.24 pA/sq microns at 40 K were obtained.
- Publication:
-
Electronics Letters
- Pub Date:
- July 1989
- DOI:
- 10.1049/el:19890623
- Bibcode:
- 1989ElL....25..929D
- Keywords:
-
- Aluminum Gallium Arsenides;
- Current Density;
- Infrared Absorption;
- Infrared Detectors;
- Quantum Wells;
- Absorption Spectra;
- Electric Current;
- Gallium Arsenides;
- Incidence;
- Electronics and Electrical Engineering