Interband tunneling in polytype GaSb/AlSb/InAs heterostructures
Abstract
Polytype heterostructures of GaSb/AlSb/InAs show interband tunneling due to the 0.1 eV overlap of the InAs conduction band and the GaSb valence band. This broken-gap configuration results in a novel mechanism for negative differential resistance that has potential applications in high-speed devices. We have demonstrated for the first time interband tunneling in single-barrier and double-barrier polytype heterostructures. Single-barrier structures show negative differential resistance due to the change in interband tunneling with applied bias. A peak-to-valley ratio of 2.7:1 at 77 K was observed in this case. Double-barrier structures using an InAs quantum well exhibit resonant interband tunneling with a peak-to-valley current ratio of more than 60:1 at 77 K. This structure is promising for applications to three-terminal devices because of the very wide quantum well that can be achieved.
- Publication:
-
Applied Physics Letters
- Pub Date:
- November 1989
- DOI:
- 10.1063/1.102151
- Bibcode:
- 1989ApPhL..55.2023L
- Keywords:
-
- Aluminum Antimonides;
- Electron Tunneling;
- Gallium Antimonides;
- Heterojunctions;
- Indium Arsenides;
- Barrier Layers;
- Conduction Bands;
- Energy Gaps (Solid State);
- Negative Resistance Devices;
- Quantum Wells;
- Valence;
- Volt-Ampere Characteristics;
- Solid-State Physics