Heavily boron-doped Si layers grown below 700 °C by molecular beam epitaxy using a HBO2 source
Abstract
Boron doping in Si layers grown by molecular beam epitaxy (MBE) at 500-700 °C using a HBO2 source has been studied. The maximum boron concentration without detectable oxygen incorporation for a given substrate temperature and Si growth rate has been determined using secondary-ion mass spectrometry analysis. Boron present in the Si MBE layers grown at 550-700 °C was found to be electrically active, independent of the amount of oxygen incorporation. By reducing the Si growth rate, highly boron-doped layers have been grown at 600 °C without detectable oxygen incorporation.
- Publication:
-
Applied Physics Letters
- Pub Date:
- August 1989
- DOI:
- 10.1063/1.101763
- Bibcode:
- 1989ApPhL..55..795L
- Keywords:
-
- Carrier Density (Solid State);
- Doped Crystals;
- Molecular Beam Epitaxy;
- Silicon;
- Boron;
- Boron Oxides;
- Mass Spectroscopy;
- Substrates;
- Solid-State Physics