Pulsed laser synthesis of titanium silicides using a Q-Switched Nd: Glass laser
Abstract
Titanium films 120 nm thick deposited on single-crystalline silicon (c-Si) as well as poly-Si/SiO2/c-Si substrates were subjected to Nd: glass laser irradiation. Laser fluences of 1,1.5, and 2 J/cm2 were used at the pulse duration of 30 ns. From RBS analysis it follows that on c-Si substrate titanium suicide is formed using one pulse of 1.5 J/cm2 energy density. On the substrate with surface overlayers lower fluence (1 J/cm2) was sufficient. Under these conditions the sheet resistance of the samples decreased from the initial value 5 Ω/□ to 2 3 Ω/□. The smaller threshold density of energy for suicide formation in Ti/polySi/SiO2/c-Si structure is shown to be a consequence of the SiO2 underlayer, which is a poorer heat conductor than silicon. The experimental results of the suicide synthesis are in semi-quantitative accordance with the numerical computations of the temperature vs time evolution and depth temperature distribution in our samples.
- Publication:
-
Applied Physics A: Materials Science & Processing
- Pub Date:
- June 1989
- DOI:
- 10.1007/BF00617850
- Bibcode:
- 1989ApPhA..48..503D
- Keywords:
-
- PACS 68.55 - 79.20D - 82.50;
- 68.55;
- 79.20D;
- 82.50