The goal of the Phase 1 effort was to establish a basic growth process for depositing single-crystal InP films on Si substrates: our experience in growing high-quality GaAs-on-Si and GaP-on-Si Structures was to provide a background to guide the experiments. Depositions were carried out by atmospheric-pressure MOCVD in a SPI-MO CVD 450 reactor; the sources chemicals used were trimethylindium (TMin) and phosphine (PH3) and the main carrier gas was H2. Starting from these basic guidelines, a similar process for InP-on-Si was attempted, with the major variables occurring in Step 2, the nucleation procedure, which is really the most critical step since the surface-oxide-removal procedure (Step 1) had been previously optimized for other heteroepitaxy-on-Si projects. Several different types of nucleation layers/procedures were attempted. These included different materials (InP, In, or P), different thickness, and different temperatures: a brief summary of these runs is listed in Table 2-1.
- Pub Date:
- May 1988
- Crystal Growth;
- Indium Phosphides;
- Electronics and Electrical Engineering