Dose-enhancement effects in TaSi/Al- and Al-gate MOS devices
Abstract
The response of MOS capacitors with TaSi/Al and Al electrodes to medium- and low-energy X-irradiation is investigated. Experimentally measured dose-enhancement effects are compared with computer simulations for these structures.
- Publication:
-
Presented at the 25th Annual Conference on Nuclear and Space Radiation Effects
- Pub Date:
- 1988
- Bibcode:
- 1988nsre.confQ....F
- Keywords:
-
- Computerized Simulation;
- Integrated Circuits;
- Metal Oxide Semiconductors;
- Radiation Effects;
- Aluminum;
- Electrodes;
- Irradiation;
- Tantalum;
- Solid-State Physics