Preparation of dilute magnetic semiconductor films by metalorganic chemical vapor deposition
Abstract
A method for preparation of a dilute magnetic semiconductor (DMS) film is provided, in which a Group II metal source, a Group VI metal source and a transition metal magnetic ion source are pyrolyzed in the reactor of a metalorganic chemical vapor deposition (MOCVD) system by contact with a heated substrate. As an example, the preparation of films of Cd(sub 1-x)Mn(sub x)Te, in which 0 is less than or equal to x less than or equal to 0.7, on suitable substrates (e.g., GaAs) is described. As a source of manganese, tricarbonyl (methylcyclopentadienyl) manganese (TCPMn) is employed. To prevent TCPMn condensation during its introduction into the reactor, the gas lines, valves and reactor tubes are heated. A thin-film solar cell of n-i-p structure, in which the i-type layer comprises a DMS, is also described; the i-type layer is suitably prepared by MOCVD.
- Publication:
-
National Aeronautics and Space Administration Report
- Pub Date:
- September 1988
- Bibcode:
- 1988nasa.rept.....N
- Keywords:
-
- Dilution;
- Magnetic Materials;
- Semiconductors (Materials);
- Solutions;
- Thin Films;
- Vapor Deposition;
- Ion Sources;
- Manganese;
- Organometallic Compounds;
- Patent Applications;
- Solar Cells;
- Transition Metals;
- Solid-State Physics