Process dependent morphology of the Si/SiO2 interface measured with scanning tunneling microscopy
Abstract
A new experimental technique to determine Si/SiO2 interface morphology is described. Thermal oxides of silicon are chemically removed, and the resulting surface topogrpahy is measured with scanning tunneling microscopy. Interfaces prepared by oxidation of Si (100) and (111) surfaces, followed by postoxidation anneal (POA) at different temperatures, have been characterized. Correlations between interface structure, chemistry, and electrical characteristics are described.
- Publication:
-
NASA STI/Recon Technical Report A
- Pub Date:
- 1988
- Bibcode:
- 1988STIA...8932322H
- Keywords:
-
- Scanning Tunneling Microscopy;
- Silicon;
- Silicon Dioxide;
- Solid-Solid Interfaces;
- Electrical Properties;
- Morphology;
- Surface Reactions;
- Surface Roughness;
- Solid-State Physics