On-site Coulomb repulsion and resonant tunneling
Abstract
We study the effect of on-site Coulomb repulsion on the process of resonant tunneling. We find that the tunneling peak results from a crossover from the high-temperature Kondo phase to the low-temperature mixed-valence phase of the system when the chemical potential is varied across the on-site localized-state energy. Consequently, the line shape is non-Lorentzian, with rather unusual temperature dependence. Moreover, a magnetic field does not split the tunneling peak, but the line shape is modified. The effect of coupling between localized states is also discussed.
- Publication:
-
Physical Review Letters
- Pub Date:
- October 1988
- DOI:
- 10.1103/PhysRevLett.61.1768
- Bibcode:
- 1988PhRvL..61.1768N
- Keywords:
-
- 71.55.Jv;
- 73.40.Qv;
- Disordered structures;
- amorphous and glassy solids;
- Metal-insulator-semiconductor structures