Study and modeling of energetic carrier injection in the insulator of MIS structures

Measurement of semiconductor devices of silicon on sapphire type were made in order to identify the parameters affected by carrier injection, in the frame of VLSI development. Electron-hole pairs were created optically in the silicon substrate with enough energy to be injected in the insulator. The current injected is determined by indirect methods. The results are analyzed following the Shockley method. The study allows the estimation of the current intensity injected in a normally functioning transistor, and the voltage limit over which hot carrier injection takes place.