A novel deposition concept for amorphous superlattices
Abstract
An efficient, photochemically controlled method has been developed which facilitates the continuous deposition of various superlattices in amorphous semiconductors. In combination with two modes of excitation, at least one of which is operated in a pulsed mode, an appropriately selected pair of source gases accumulates continuously binary layers of amorphous semiconductors. As an example of the verification of this novel process, an amorphous superlattice composed of an amorphous silicon carbide barrier layer and an amorphous silicon well layer was prepared from a mixture of disilane and carbon tetrafluoride.
- Publication:
-
Nature
- Pub Date:
- January 1988
- DOI:
- 10.1038/331153a0
- Bibcode:
- 1988Natur.331..153K
- Keywords:
-
- Amorphous Semiconductors;
- Photochemical Reactions;
- Superlattices;
- Vapor Deposition;
- Barrier Layers;
- Carbon Tetrafluoride;
- Excitation;
- Plasma Spraying;
- Silicon Carbides;
- Solid-State Physics