High Temperature Operated Enhancement-Type β-SiC MOSFET
Abstract
Enhancement-type β-SiC MOSFETs have been fabricated on a single crystalline β-SiC layer grown on a 3-inch Si (100) substrate by chemical vapor deposition. The MOSFETs fabricated by applying the reactive ion etching technique show reasonable I-V characteristics at room temperature. The saturation tendency of the drain currents has been observed at a drain voltage as high as 18 V. The MOSFETs operate even at 350°C.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- November 1988
- DOI:
- 10.1143/JJAP.27.L2143
- Bibcode:
- 1988JaJAP..27L2143F
- Keywords:
-
- Field Effect Transistors;
- High Temperature Tests;
- Silicon Carbides;
- Vapor Deposition;
- Crystal Growth;
- Etching;
- Saturation;
- Single Crystals;
- Substrates;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering