Single crystals of SnS 2, crystallizing with the hexagonal CdI 2 structure, were grown by vapor transport and chemical vapor transport. Electronic, optical, and infrared properties were studied, as well as thermal stability in flowing oxygen. The impact on the electrical properties of slight deviations from stoichiometry and halogen impurity were investigated. Crystals free of halogen impurity can be grown by vapor transport. The sign of the majority carriers of crystals grown by vapor transport is dependent upon the growth conditions. If higher growth temperatures are used (750-700°C), vapor-grown crystals are n-type semiconductors and exhibit low resistivities (ϱ = 4.5(5) Ω cm at 25°C). Annealing of vapor-grown crystals in sulfur at 600°C increases the resistivity to 2 × 10 5 Ω cm. When the charge-growth temperatures are lowered to 650-600°C and 5% excess sulfur is included in the charge, the crystals are p-type semiconductors with high resistivities (ϱ > 10 7 Ω cm). Crystals grown in the presence of halogen (Cl 2) contain 22(6) ppm chlorine and are n-type semiconductors, ϱ = 5 Ω cm at 25°C. The resistivity is not altered by annealing in sulfur. The chlorine impurity acts as donor states in this material.