Simulation of protoninduced energy deposition in integrated circuits
Abstract
A timeefficient simulation technique was developed for modeling the energy deposition by incident protons in modern integrated circuits. To avoid the excessive computer time required by many protoneffects simulators, a stochastic method was chosen to model the various physical effects responsible for energy deposition by incident protons. Using probability density functions to describe the nuclear reactions responsible for most protoninduced memory upsets, the simulator determines the probability of a proton hit depositing the energy necessary for circuit destabilization. This factor is combined with various circuit parameters to determine the expected errorrate in a given proton environment. An analysis of transient or doserate effects is also performed. A comparison to experimental energydisposition data proves the simulator to be quite accurate for predicting the expected number of events in certain integrated circuits.
 Publication:

IEEE Transactions on Nuclear Science
 Pub Date:
 February 1988
 DOI:
 10.1109/23.12869
 Bibcode:
 1988ITNS...35..981F
 Keywords:

 Computerized Simulation;
 Integrated Circuits;
 Proton Irradiation;
 Bit Error Rate;
 Circuit Reliability;
 Digital Data;
 Earth Orbital Environments;
 Memory (Computers);
 Monte Carlo Method;
 Electronics and Electrical Engineering