Evolution of the MOS transistor - From conception to VLSI
Abstract
Historical developments of the MOSFET during the last 60 years are reviewed, from the 1928 patent disclosures of the field-effect conductivity modulation concept and the semiconductor triode structures proposed by Lilienfeld to the 1947 Shockley-originated efforts which led to the laboratory demonstration of the modern silicon MOSFET in 1960. A survey is then made of the milestones of the past 30 years leading to the latest submicron silicon logic CMOS and BICMOS (bipolar-junction transistor CMOS combined) arrays and the three-dimensional and ferroelectric extensions of Dennard's one-transistor DRAM cell. The status of the submicron lithographic technologies is summarized. Future trends of memory cell density and logic gate speed are projected. Comparisons of the switching speed of the silicon MOSFET with that of silicon bipolar and GaAs FETs are reviewed.
- Publication:
-
IEEE Proceedings
- Pub Date:
- October 1988
- Bibcode:
- 1988IEEEP..76.1280S
- Keywords:
-
- Cmos;
- Field Effect Transistors;
- Gallium Arsenides;
- High Temperature Superconductors;
- Metal Oxide Semiconductors;
- Very Large Scale Integration;
- Capacitance-Voltage Characteristics;
- Minority Carriers;
- P-N Junctions;
- Silicon;
- Substrates;
- Thin Films;
- Electronics and Electrical Engineering