Gallium-arsenide E- and D-MESFET device noise characteristics operated at cryogenic temperatures with ultralow drain current
Abstract
The low-frequency noise characteristics of GaAs MESFETs operating at very low power and at cyrogenic temperatures of 77 and 10K as well as at room temperature are discussed. A self-aligned gate and a buried p-layer were incorporated to maximize device gain and minimize low-frequency noise. Measurements at 77K show a noise voltage spectral density of 1.0-2.0 microV/sq rt Hz at 1.0 Hz (referred to the transistor input) with a drain current of 1.0 microA.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- May 1988
- DOI:
- 10.1109/55.702
- Bibcode:
- 1988IEDL....9..238S
- Keywords:
-
- Cryogenic Temperature;
- Field Effect Transistors;
- Focal Plane Devices;
- Gallium Arsenides;
- Noise Spectra;
- P-Type Semiconductors;
- Czochralski Method;
- Low Frequencies;
- Electronics and Electrical Engineering