Heteroepitaxy of GaAs on Si: The effect of in situ thermal annealing under AsH3
Abstract
This letter shows that an in situ thermal annealing step in AsH3/H2 during the metalorganic vapor phase epitaxy of GaAs on Si(001) improves the crystalline quality. The dislocation density is reduced (below 107 cm-2) without affecting the Si diffusion across the heterointerface or the strain level in the epilayer. The nature of the various near-band-gap recombinations present in the unannealed and annealed samples is discussed in light of selective photoluminescence experiments.
- Publication:
-
Applied Physics Letters
- Pub Date:
- June 1988
- DOI:
- 10.1063/1.99595
- Bibcode:
- 1988ApPhL..52.1976F
- Keywords:
-
- Annealing;
- Arsenic Compounds;
- Gallium Arsenides;
- Hydrogen Compounds;
- Photoluminescence;
- Vapor Phase Epitaxy;
- Energy Gaps (Solid State);
- Silicon;
- Substrates;
- X Ray Diffraction;
- Solid-State Physics