Clustering and ordering in III-V alloys
Abstract
ZnSnP2 is a potentially useful semiconductor which can have either the sphalerite structure or the chalcopyrite structure with no tetragonal distortion (c=2a). We have grown ZnSnP2 on various orientations of GaAs by liquid phase epitaxy and found that the best growth occurs on (110) surfaces. Double-crystal x-ray diffraction measurements indicate that these (110) layers have a lattice constant of 5.6507A, while (111) As layers grown under identical conditions have a lattice constant of 5.6532A, which matches GaAs to within + or - .0002A.
- Publication:
-
Final Report
- Pub Date:
- March 1987
- Bibcode:
- 1987wusl.rept.....W
- Keywords:
-
- Gallium Arsenides;
- Heterojunctions;
- Indium Phosphides;
- Liquid Phase Epitaxy;
- Semiconductors (Materials);
- Ternary Alloys;
- Zinc Compounds;
- Aluminum Arsenides;
- Band Structure Of Solids;
- Crystal Lattices;
- Energy Gaps (Solid State);
- Phosphorus Compounds;
- Tin Compounds;
- X Ray Diffraction;
- Solid-State Physics