Numerical calculations of dopent diffusion involving flashlamp heating of silicon
Abstract
Work was begun on finding a solution to the flashlamp heating of a doped semiconductor. A Blackbody spectrum was assumed to follow a Lorentzian lineshape. Finite difference techniques were used. The diffusion of dopant through a semiconductor was calculated. A comparison was made between an analytical solution and numerical calculation. The results agreed to within 0.002 percent.
- Publication:
-
In Universal Energy Systems
- Pub Date:
- December 1987
- Bibcode:
- 1987uesi....2.....V
- Keywords:
-
- Additives;
- Black Body Radiation;
- Dopes;
- Heating;
- Semiconductors (Materials);
- Thermal Diffusion;
- Conductive Heat Transfer;
- Diffusivity;
- Finite Difference Theory;
- Flash Lamps;
- Line Spectra;
- Silicon;
- Solid-State Physics