Optical nonlinearities in GaAs/GaAlAs multiple quantum wells fabricated by metalorganic chemical vapor deposition for use in optical signal processing
Abstract
Preparation of high quality GaAs/GaA1As Multiple Quantum Wells (MQW) grown by Metalorganic Chemical Vapor Deposition on GaAs substrates and measurement of nonlinear saturation has been completed in this 18 month contract. The results show materials which rivals the highest quality MQW's grown by any technique. Preparation of GaAs/GaA1As MQW's on GaP substrates and measurement of nonlinear saturation has been completed. It was shown that this material has high cw saturation intensity and, if used in a nonlinear Fabry-Perot, would be useful only in pulsed experiments. The material looks ideal for hybrid devices.
- Publication:
-
California Univ., Los Angeles Report
- Pub Date:
- December 1987
- Bibcode:
- 1987ucla.reptQ....G
- Keywords:
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- Aluminum Gallium Arsenides;
- Gallium Arsenides;
- Optical Data Processing;
- Quantum Wells;
- Signal Processing;
- Vapor Deposition;
- Chemical Reactions;
- Fabry-Perot Interferometers;
- Gallium Phosphides;
- Heterojunctions;
- Nonlinear Systems;
- Organometallic Compounds;
- Quantum Electronics;
- Saturation (Chemistry);
- Solid-State Physics