Mechanisms of external effects on crystal growth
Abstract
The dependence of epitaxial crystal growth on external factors is examined with particular reference to experimental results obtained for PbTe, Pb(1-x)Sn(x)Te, and HgTe films. The mechanisms affecting the gas phase, growth surface, and surface layers are discussed. Equations describing growth and cluster formation kinetics, including the formation of precipitates in the case of deviation from stoichiometry, are presented. Finally, applications to the growth of planar and nonplanar structures are discussed.
- Publication:
-
Stoichiometry in Crystalline Compounds and its Effect on their Physical Properties
- Pub Date:
- 1987
- Bibcode:
- 1987scse.book...85G
- Keywords:
-
- Crystal Defects;
- Lead Tellurides;
- Mercury Tellurides;
- Semiconducting Films;
- Tin Tellurides;
- Vapor Phase Epitaxy;
- Bicrystals;
- Laser Applications;
- Ultraviolet Lasers;
- Solid-State Physics