Characterization of hydrogen passivated polycrystalline silicon solar cells
Abstract
Results of characterization of hydrogen-implanted polycrystalline silicon solar cells are reported. It is found that in large-grain material the increase of diffusion length due to the passivation of intragrain defects like dislocations dominates the reduction of recombination activity of grain boundaries. A reduction of leakage current through the junction, leading to a drastic increase of the shunt resistance, is observed.
- Publication:
-
19th IEEE Photovoltaic Specialists Conference
- Pub Date:
- 1987
- Bibcode:
- 1987pvsp.conf.1059L
- Keywords:
-
- Hydrogen Ions;
- Ion Implantation;
- Polycrystals;
- Silicon;
- Solar Cells;
- Diffusion Length;
- Grain Boundaries;
- Open Circuit Voltage;
- Short Circuit Currents;
- Electronics and Electrical Engineering