Hydrogen passivation in surface thin layer of polysilicon solar cells
Abstract
Polysilicon solar cells without antireflection coatings were bombarded by low-energy ion beams in order to passivate the dangling bonds in grain boundaries. It was found that the lower original photovoltaic efficiency, the greater the relative improvement and saturated dose. An X-ray photoelectron spectrometer (XPS) was used to analyze the cell surface. After hydrogen passivation the energy of the photoelectrons increased by 0.26 eV.
- Publication:
-
19th IEEE Photovoltaic Specialists Conference
- Pub Date:
- 1987
- Bibcode:
- 1987pvsp.conf.1050X
- Keywords:
-
- Hydrogen Ions;
- Ion Implantation;
- Silicon;
- Solar Cells;
- Thin Films;
- Grain Boundaries;
- Photoelectron Spectroscopy;
- Polycrystals;
- Surface Finishing;
- Solid-State Physics