Silicon solar cells with improved radiation resistance
Abstract
Results of a study aimed at the improvement of radiation resistance of silicon solar cells by incorporation of a defect gettering zone are reported. The cells were irradiated by 1-MeV electrons and 10-MeV protons. The current-voltage characteristics were measured, and a preliminary study of defects was carried out by deep level transient spectroscopy. Although these cells have, at present, a relatively low as-manufactured efficiency, it is found that their radiation resistance is improved considerably.
- Publication:
-
19th IEEE Photovoltaic Specialists Conference
- Pub Date:
- 1987
- Bibcode:
- 1987pvsp.conf..709M
- Keywords:
-
- P-N Junctions;
- Radiation Tolerance;
- Silicon;
- Solar Cells;
- Electrical Resistivity;
- Getters;
- Open Circuit Voltage;
- Satellite Solar Energy Conversion;
- Short Circuit Currents;
- Electronics and Electrical Engineering