Radiation hardness and conduction mechanisms of MINP solar cells on Ga- and B-doped Si substrates
Abstract
Metal-insulator-n+Si-p+Si solar cells, fabricated on Ga- and B-doped substrates, were compared for tolerance to 1.0-MeV electron irradiation. Cells were tested by deep-level transient spectroscopy and current spectroscopic techniques prior to and after irradiation. Ga-doped substrates produced cells with superior tolerance to irradiation. After irradiation, B-doped cells gave defect levels more towards the upper half of the bandgap compared to Ga-doped cells, which showed levels toward the lower half. After irradiation, B-doped cells appear to be more susceptible to S-R-H recombination, whereas Ga-doped cells exhibit a multistep tunneling recombination. The latter results in a smaller reverse saturation current which better preserves Voc.
- Publication:
-
19th IEEE Photovoltaic Specialists Conference
- Pub Date:
- 1987
- Bibcode:
- 1987pvsp.conf..644B
- Keywords:
-
- Boron;
- Gallium;
- Radiation Hardening;
- Silicon;
- Solar Cells;
- Volt-Ampere Characteristics;
- Activation Energy;
- Crystal Defects;
- Electron Irradiation;
- N-Type Semiconductors;
- P-Type Semiconductors;
- Electronics and Electrical Engineering