Numerical simulation of radiation damage in 1MeV electron irradiated Al0.335Ga0.67As solar cell under normal and omnidirectional incidence
Abstract
A numerical simulation of the displacement defect density, the damage constants for minoritycarrier diffusion lengths and the degradation of shortcircuit current Isc, opencircuit voltage Voc and the conversion efficiency eta sub c in a 1MeVelectronirradiated Al0.335Ga0.67As pn junction solar cell under normal and omnidirectional incidence is presented. In the simulation, it is assumed that the radiationinduced displacement defects formed effective recombination centers which reduce the minoritycarrier diffusion length and hence degrade the Isc, Voc and eta sub c of the solar cell. Good agreement was obtained between calculated values and experimental data for fluences of 1014 and 1015/sq cm and under normal incidence condition. Calculations for the omnidirectional incidence case have also been carried out. The damage constants were three to ten times larger those for the normal incidence case.
 Publication:

19th IEEE Photovoltaic Specialists Conference
 Pub Date:
 1987
 Bibcode:
 1987pvsp.conf..641Y
 Keywords:

 Aluminum Gallium Arsenides;
 Radiation Damage;
 Solar Cells;
 Diffusion Length;
 Electron Irradiation;
 Minority Carriers;
 Open Circuit Voltage;
 PN Junctions;
 Short Circuit Currents;
 Electronics and Electrical Engineering