Bifacial MIS inversion layer solar cells based on low temperature silicon surface passivation
Abstract
A novel bifacial silicon solar cell fabricated by a simple low-temperature process is introduced. The front side is characterized by an MIS contact grid and a charged plasma silicon nitride layer. The rear side is made up of ohmic grid lines in combination with silicon nitride for surface passivation. This appears to be the first bifacial solar cell without any highly doped region and completely processed at temperatures below 500 C. An AM1 efficiency of 15 and 13.2 percent was achieved for front and back illumination, respectively. The dependence of the solar cell data on cell thickness was experimentally investigated in the range from 80 microns to 330 microns. This thickness dependence was confirmed by theoretical one-dimensional calculations.
- Publication:
-
19th IEEE Photovoltaic Specialists Conference
- Pub Date:
- 1987
- Bibcode:
- 1987pvsp.conf..388J
- Keywords:
-
- Fabrication;
- Low Temperature;
- Mis (Semiconductors);
- Passivity;
- Silicon;
- Solar Cells;
- Open Circuit Voltage;
- Quantum Efficiency;
- Short Circuit Currents;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering