A new method of electron lithography involving the use of stencil masks is proposed. Theoretical and experimental results on the formation of the stencil pattern in the polymer resist are presented. The use of stencil masks makes it possible to reproduce patterns by using electron beams with energies of up to 100 keV. The method can be used for forming patterns in resist layers up to 10 microns thick.
Problems of Lithography in Microelectronics
- Pub Date:
- Electron Beams;
- Stencil Processes;
- Electron Scattering;
- Silicon Dioxide;
- Electronics and Electrical Engineering