Mechanisms for interface-trap generation in polysilicon gate devices
Abstract
Interface-traps have been measured on transistors immediately after a pulse of ionizing radiation using a fast subthreshold I-V technique. Results are presented for interface-trap generation as a function of temperature and for different process conditions. These studies more clearly identify the physical mechanisms of interface-trap generation for polysilicon gate CMOS devices.
- Publication:
-
Presented at the 24th Annual Conference on Nuclear and Space Radiation in Electronics
- Pub Date:
- 1987
- Bibcode:
- 1987nsre.confR....S
- Keywords:
-
- Cmos;
- Gates (Circuits);
- Hole Mobility;
- Radiation Effects;
- Transistors;
- Capacitors;
- Electric Current;
- Integrated Circuits;
- Interfaces;
- Silicon Polymers;
- Trapping;
- Electronics and Electrical Engineering