Fundamental studies in the OM-CVD growth of Ga-In-As-Sb

The fundamental OM-CVD growth processes are studied. Several ternary and quaternary alloys have been synthesized and their structural, optical and electrical properties are studied. Atomic Layer Epitaxy is developed to control the deposition process to the atomic level. Strained layer superlattices have been used as buffer layers to reduce defects originating from GaAs substrates.