Energy loss rates for light holes in InGaAs/GaAs strained layer single quantum wells
Abstract
Energy relaxation rates for light holes in InGaAs/GaAs strained layer quantum wells are measured. Two techniques were used to measure light hole temperatures as a function of power dissipated in the hole gas. For T(sub h) less than 20K, Shubnikov-de Haas oscillations were used and for T(sub h) greater than 20K, a photoluminescence technique was employed.
- Publication:
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Presented at the Fall Meeting of the Materials Research Society
- Pub Date:
- November 1987
- Bibcode:
- 1987mrs..meetU....S
- Keywords:
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- Field Effect Transistors;
- Gallium Arsenides;
- Quantum Wells;
- Energy Dissipation;
- Photoluminescence;
- Solid-State Physics